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| File name: | php32n06lt_phb32n06lt.pdf [preview php32n06lt phb32n06lt] |
| Size: | 274 kB |
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| Mfg: | Philips |
| Model: | php32n06lt phb32n06lt 🔎 |
| Original: | php32n06lt phb32n06lt 🔎 |
| Descr: | . Electronic Components Datasheets Active components Transistors Philips php32n06lt_phb32n06lt.pdf |
| Group: | Electronics > Components > Transistors |
| Uploaded: | 08-06-2020 |
| User: | Anonymous |
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File name php32n06lt_phb32n06lt.pdf PHP32N06LT; PHB32N06LT N-channel enhancement mode field effect transistor Rev. 01 -- 06 November 2001 Product data 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOSTM1 technology. Product availability: PHP32N06LT in SOT78 (TO220AB) PHB32N06LT in SOT404 (D2-PAK). 2. Features s TrenchMOSTM technology s Logic level compatible. 3. Applications s General purpose switching s Switched mode power supplies. 4. Pinning information Table 1: Pinning - SOT78 (TO-220AB), SOT404 (D2-PAK), simplified outline and symbol Pin Description Simplified outline Symbol 1 gate (g) mb mb d 2 drain (d) [1] 3 source (s) g mb mounting base; MBB076 s connected to drain (d) 2 1 3 MBK116 MBK106 1 2 3 SOT78 (TO-220AB) SOT404 (D2-PAK) [1] It is not possible to make connection to pin 2 of the SOT404 package. 1. TrenchMOS is a trademark of Koninklijke Philips Electronics N.V. Philips Semiconductors PHP32N06LT; PHB32N06LT N-channel enhancement mode field effect transistor 5. Quick reference data Table 2: Quick reference data Symbol Parameter Conditions Typ Max Unit VDS drain-source voltage (DC) - 60 V ID drain current (DC) Tmb = 25 | ||

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